Title
Manganese diffusion in monocrystalline germanium
Abbreviated Journal Title
Scr. Mater.
Keywords
Mn; Diffusion; Ge; Spintronics; SILICON; SPECTROSCOPY; GE; TEMPERATURE; PHOSPHORUS; SOLUBILITY; BORON; GOLD; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering
Abstract
The diffusion of a half monolayer of Mn deposited by molecular beam epitaxy on a Ge(0 0 1) substrate was studied via secondary ion mass spectrometry. Mn diffused in Ge under extrinsic conditions, exhibiting a solubility of 0.7-0.9%. All the Mn atoms were activated, occupying Ge substitutional sites and exhibiting a negative charge, in agreement with semiconductor doping theory. The diffusion mechanism being vacancy (V)-mediated, the formation of Mn-V pairs is suggested. Mn surface desorption occurred for temperatures > 600 degrees C. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Journal Title
Scripta Materialia
Volume
67
Issue/Number
3
Publication Date
1-1-2012
Document Type
Article
Language
English
First Page
269
Last Page
272
WOS Identifier
ISSN
1359-6462
Recommended Citation
"Manganese diffusion in monocrystalline germanium" (2012). Faculty Bibliography 2010s. 3154.
https://stars.library.ucf.edu/facultybib2010/3154
Comments
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