Manganese diffusion in monocrystalline germanium

    Authors

    A. Portavoce; O. Abbes; Y. Rudzevich; L. Chow; V. Le Thanh;C. Girardeaux

    Comments

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    Abbreviated Journal Title

    Scr. Mater.

    Keywords

    Mn; Diffusion; Ge; Spintronics; SILICON; SPECTROSCOPY; GE; TEMPERATURE; PHOSPHORUS; SOLUBILITY; BORON; GOLD; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering

    Abstract

    The diffusion of a half monolayer of Mn deposited by molecular beam epitaxy on a Ge(0 0 1) substrate was studied via secondary ion mass spectrometry. Mn diffused in Ge under extrinsic conditions, exhibiting a solubility of 0.7-0.9%. All the Mn atoms were activated, occupying Ge substitutional sites and exhibiting a negative charge, in agreement with semiconductor doping theory. The diffusion mechanism being vacancy (V)-mediated, the formation of Mn-V pairs is suggested. Mn surface desorption occurred for temperatures > 600 degrees C. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

    Journal Title

    Scripta Materialia

    Volume

    67

    Issue/Number

    3

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    269

    Last Page

    272

    WOS Identifier

    WOS:000306256600012

    ISSN

    1359-6462

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