Manganese diffusion in monocrystalline germanium
Abbreviated Journal Title
Mn; Diffusion; Ge; Spintronics; SILICON; SPECTROSCOPY; GE; TEMPERATURE; PHOSPHORUS; SOLUBILITY; BORON; GOLD; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering
The diffusion of a half monolayer of Mn deposited by molecular beam epitaxy on a Ge(0 0 1) substrate was studied via secondary ion mass spectrometry. Mn diffused in Ge under extrinsic conditions, exhibiting a solubility of 0.7-0.9%. All the Mn atoms were activated, occupying Ge substitutional sites and exhibiting a negative charge, in agreement with semiconductor doping theory. The diffusion mechanism being vacancy (V)-mediated, the formation of Mn-V pairs is suggested. Mn surface desorption occurred for temperatures > 600 degrees C. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
"Manganese diffusion in monocrystalline germanium" (2012). Faculty Bibliography 2010s. 3154.