Low-temperature (210 degrees C) deposition of crystalline germanium via in situ disproportionation of GeI2

    Authors

    D. T. Restrepo; K. E. Lynch; K. Giesler; S. M. Kuebler;R. G. Blair

    Comments

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    Abbreviated Journal Title

    Mater. Res. Bull.

    Keywords

    Semiconductors; Inorganic compound; Halides; Vapor deposition; X-ray; diffraction; CHEMICAL-VAPOR-DEPOSITION; GROWTH; DIHALIDES; FILMS; Materials Science, Multidisciplinary

    Abstract

    A new approach is reported for depositing crystalline germanium films. The deposition occurs at low temperatures (210-260 degrees C) via in situ disproportionation of GeI2 and is thereby useful for depositing Ge onto a wide range of surfaces. Deposition onto glass and polymer substrates is demonstrated. The rate of deposition onto glass is found to be 25 ng min(-1). New synthetic routes to GeI2, GeI4, and Cu3Ge are also reported. These are valuable precursors for the synthesis of germanium nanostructures and organogermanium compounds. (C) 2012 Elsevier Ltd. All rights reserved.

    Journal Title

    Materials Research Bulletin

    Volume

    47

    Issue/Number

    11

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    3484

    Last Page

    3488

    WOS Identifier

    WOS:000311865200068

    ISSN

    0025-5408

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