Authors

B. K. Sarker;S. I. Khondaker

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LEVEL ALIGNMENT; PENTACENE; INJECTION; EMISSION; METAL; Physics, Applied

Abstract

We report high-performance short channel pentacene field effect transistor (FET) using carbon nanotube aligned array electrodes. The devices show field effect mobility of up to 0.65 cm(2)/Vs and current on-off ratio of up to 1.7 x 10(6), which is the best for sub-micron pentacene FETs. The calculated cutoff frequency (f(c)) of the devices is up to 211 MHz which is among the best reported f(c) for organic transistors. The high performance of our short channel FET is attributed to improved charge injections from the aligned array carbon nanotube electrodes into the pentacene.

Journal Title

Applied Physics Letters

Volume

100

Issue/Number

2

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000299126800073

ISSN

0003-6951

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