Studies on the effect of hydrogen doping during deposition of Al:ZnO films using RF magnetron sputtering

    Authors

    B. P. Shantheyanda; K. B. Sundaram;N. S. Shiradkar

    Comments

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    Abbreviated Journal Title

    Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater.

    Keywords

    Zinc oxide; ZnO:Al; rf sputtering; Hydrogen doped ZnO; DOPED ZNO FILMS; OXIDE THIN-FILMS; ZINC-OXIDE; TRANSPARENT CONDUCTORS; OPTICAL-PROPERTIES; AL FILMS; PLASMA; PARAMETERS; OXYGEN; Materials Science, Multidisciplinary; Physics, Condensed Matter

    Abstract

    Aluminum doped ZnO (ZnO:Al) films were deposited using rf magnetron sputtering in the presence of hydrogen gas in the chamber. A comparative study of the films deposited with and without hydrogen was performed. The XPS studies indicated that the decrease in resistivity of ZnO:Al films with the introduction of hydrogen gas is attributed to the reduced adsorption of oxygen species in the film grain boundaries. The average percentage transmission in the visible region of the films was around 92-95% and band gap was found to be about in the range of 3.15-3.17 eV. The lowest resistivity of 1.8 x 10(-4) Omega cm was achieved for the ZnO:Al film deposited with hydrogen. (C) 2012 Elsevier B.V. All rights reserved.

    Journal Title

    Materials Science and Engineering B-Advanced Functional Solid-State Materials

    Volume

    177

    Issue/Number

    20

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    1777

    Last Page

    1782

    WOS Identifier

    WOS:000311926900009

    ISSN

    0921-5107

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