Oxidation Behavior of ZrB2-SiC-TaC Ceramics

    Authors

    Y. G. Wang; B. S. Ma; L. L. Li;L. N. An

    Comments

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    Abbreviated Journal Title

    J. Am. Ceram. Soc.

    Keywords

    HIGH-TEMPERATURE CERAMICS; ZIRCONIUM DIBORIDE; TASI2 ADDITIVES; SILICON; RESISTANCE; POLYCARBOSILANE; COMPOSITES; OXYGEN; TAB2; ZRB2; Materials Science, Ceramics

    Abstract

    ZrB2SiCTaC ceramics with different content of TaC were prepared by hot-pressing at 1800 degrees C in vacuum environment. The oxidation behavior of these ceramics was studied in the temperature range of 1200 degrees C1500 degrees C in air. It was found that low concentration of TaC (10 similar to vol%) deteriorated the oxidation resistance of ZrB2SiC, while high concentration of TaC (30 similar to vol%) significantly improved the oxidation resistance of the ceramics. Reoxidation experiments indicated that the metallic species (tantalum and/or silicon) diffusing out of the materials into the oxides was initially involved in the controlling process.

    Journal Title

    Journal of the American Ceramic Society

    Volume

    95

    Issue/Number

    1

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    374

    Last Page

    378

    WOS Identifier

    WOS:000298735300061

    ISSN

    0002-7820

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