The fabrication of single-electron transistors using dielectrophoretic trapping of individual gold nanoparticles

    Authors

    S. I. Khondaker; K. Luo;Z. Yao

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Nanotechnology

    Keywords

    DEVICES; PARTICLES; STATES; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    We demonstrate a simple technique for the fabrication of gold nanoparticle single-electron transistors (SET). The technique is based on nanogap fabrication using the nanoparticle break junction technique and dielectrophoretic assembly of thiolated gold nanoparticles into the nanogap. Electron transport measurements at 4.2 K show a clear and periodic Coulomb diamond structure, characteristic of an SET from a single quantum dot. We performed simulations using a commercially available SET Monte Carlo simulator to further verify that the observed transport behavior stems from a single dot and obtained different parameters for the SET.

    Journal Title

    Nanotechnology

    Volume

    21

    Issue/Number

    9

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    4

    WOS Identifier

    WOS:000274360300006

    ISSN

    0957-4484

    Share

    COinS