RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments

    Authors

    H. D. Yen; J. S. Yuan; R. L. Wang; G. W. Huang; W. K. Yeh;F. S. Huang

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    INTERFACE-TRAP GENERATION; HOT-CARRIER DEGRADATION; LOW-FREQUENCY NOISE; TRANSFORMER-FEEDBACK; MOS-TRANSISTORS; SOFT BREAKDOWN; PERFORMANCE; MOSFETS; TECHNOLOGY; AMPLIFIERS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    A current reused LC voltage-controlled oscillator (VCO) operating at 2.4 GHz range has been designed and fabricated. The measured output current, phase noise, and oscillation frequency after RF stress show significant parameter shifts from their fresh circuit condition. Impact of hot carrier effect and negative bias temperature instability on the VCO's phase noise is discussed. (C) 2012 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    52

    Issue/Number

    11

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    2655

    Last Page

    2659

    WOS Identifier

    WOS:000310767400024

    ISSN

    0026-2714

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