A Simulation Study of Colpitts Oscillator Reliability and Variability

    Authors

    J. S. Yuan;S. Y. Chen

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    Body bias; Colpitts oscillator; Monte Carlo (MC) simulation; phase; noise; process variability; HOT-CARRIER STRESS; PERFORMANCE; DESIGN; IMPACT; NOISE; SRAM; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Nanoscale CMOS reliability and process variation effect on the LC Colpitts oscillator has been examined. Mixed-mode device and circuit simulation is used to investigate the physical insight of impact ionization to the Colpitts oscillator. An analytical equation of phase noise as a function of offset frequency, transistor parameters, and body bias has been derived. The analytical predictions are in good agreement with ADS simulation results. An adaptive body bias to minimize process variation effect on the Colpitts oscillator has also been proposed. The adaptive body bias technique effectively reduces the hot electron effect and process variability on the Colpitts oscillator performance, as supported by Monte Carlo simulation results.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    12

    Issue/Number

    3

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    576

    Last Page

    581

    WOS Identifier

    WOS:000308461300006

    ISSN

    1530-4388

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