Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability

    Authors

    J. S. Yuan; H. D. Yen; S. Y. Chen; R. L. Wang; G. W. Huang; Y. Z. Juang; C. H. Tu; W. K. Yeh;J. Ma

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    Cascode class E; gate oxide breakdown; output power; power amplifier; (PA); power efficiency; reliability; POWER-AMPLIFIER; HOT-CARRIER; OXIDE BREAKDOWN; EFFICIENCY; OPERATION; IMPACT; MODEL; SOFT; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    A cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation. RF circuit performances such as output power and power-added efficiency before and after RF stress have been experimentally investigated. The measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations. The impact of hot-carrier injection and gate oxide soft breakdown on cascode class-E PA reliability is discussed.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    12

    Issue/Number

    2

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    369

    Last Page

    375

    WOS Identifier

    WOS:000305085100024

    ISSN

    1530-4388

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