Title

Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability

Authors

Authors

J. S. Yuan; H. D. Yen; S. Y. Chen; R. L. Wang; G. W. Huang; Y. Z. Juang; C. H. Tu; W. K. Yeh;J. Ma

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

Cascode class E; gate oxide breakdown; output power; power amplifier; (PA); power efficiency; reliability; POWER-AMPLIFIER; HOT-CARRIER; OXIDE BREAKDOWN; EFFICIENCY; OPERATION; IMPACT; MODEL; SOFT; Engineering, Electrical & Electronic; Physics, Applied

Abstract

A cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation. RF circuit performances such as output power and power-added efficiency before and after RF stress have been experimentally investigated. The measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations. The impact of hot-carrier injection and gate oxide soft breakdown on cascode class-E PA reliability is discussed.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

12

Issue/Number

2

Publication Date

1-1-2012

Document Type

Article

DOI Link

http://dx.doi.org/10.1109/tdmr.2011.2179548

Language

English

First Page

369

Last Page

375

WOS Identifier

WOS:000305085100024

ISSN

1530-4388

Recommended Citation

"Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability" (2012). Faculty Bibliography 2010s. 3543.
https://stars.library.ucf.edu/facultybib2010/3543