Authors

G. Zhao; Y. Zhang; D. G. Deppe; K. Konthasinghe;A. Muller

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

OPTICAL MICROCAVITIES; PHOTONIC CRYSTAL; OPERATION; LINEWIDTH; VCSELS; MODE; Physics, Applied

Abstract

We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded Q approximate to 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at T = 40 K), lasing was obtained with an incident optical power as low as P-th = 10mW (lambda(p) = 808 nm). The laser linewidth was found to be approximate to 3 GHz at P-p approximate to 5 P-th. ]

Journal Title

Applied Physics Letters

Volume

101

Issue/Number

10

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000309072800003

ISSN

0003-6951

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