Authors

R. C. Boutwell; M. Wei;W. V. Schoenfeld

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

PARAMETERS; ZNO; Physics, Applied

Abstract

Cubic Zn1-xMgxO thin films were produced by Plasma-Enhanced Molecular Beam Epitaxy. Oxygen flow rate and applied Radio-Frequency (RF) plasma power were varied to investigate the impact on film growth and optoelectronic device performance. Solar-blind and visible-blind detectors were fabricated with metal-semiconductor-metal interdigitated Ni/Mg/Au contacts and responsivity is compared under different growth conditions. Increasing oxygen flow rate and RF plasma power increased Zn incorporation in the film, which leads to phase segregation at relatively high Zn/Mg ratio. Responsivity as high as 61 A/W was measured in phase-segregated ZnMgO visible-blind detectors.

Journal Title

Applied Physics Letters

Volume

103

Issue/Number

3

Publication Date

1-1-2013

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000322146300014

ISSN

0003-6951

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