High-Robustness and Low-Capacitance Silicon-Controlled Rectifier for High-Speed I/O ESD Protection

    Authors

    Q. Cui; J. A. Salcedo; S. Parthasarathy; Y. Z. Zhou; J. J. Liou;J. J. Hajjar

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    Electrostatic discharge (ESD); parasitic capacitance; silicon-controlled; rectifier (SCR); Engineering, Electrical & Electronic

    Abstract

    A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is developed. The low capacitance is obtained by mitigating the capacitance associated with the lightly doped n-well/p-well junction. In addition to minimizing the capacitance, the high ESD robustness is achieved by optimizing independently within the same structure a silicon-controlled rectifier and a diode for the forward and reverse conduction processes, respectively. The new clamp with an area of 50 x 10 mu m(2) is able to handle an ESD current in excess of 1.5 A, whereas the capacitance at zero bias is kept at 94 fF.

    Journal Title

    Ieee Electron Device Letters

    Volume

    34

    Issue/Number

    2

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    178

    Last Page

    180

    WOS Identifier

    WOS:000314173200010

    ISSN

    0741-3106

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