Title

High-Robustness and Low-Capacitance Silicon-Controlled Rectifier for High-Speed I/O ESD Protection

Authors

Authors

Q. Cui; J. A. Salcedo; S. Parthasarathy; Y. Z. Zhou; J. J. Liou;J. J. Hajjar

Comments

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Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

Electrostatic discharge (ESD); parasitic capacitance; silicon-controlled; rectifier (SCR); Engineering, Electrical & Electronic

Abstract

A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is developed. The low capacitance is obtained by mitigating the capacitance associated with the lightly doped n-well/p-well junction. In addition to minimizing the capacitance, the high ESD robustness is achieved by optimizing independently within the same structure a silicon-controlled rectifier and a diode for the forward and reverse conduction processes, respectively. The new clamp with an area of 50 x 10 mu m(2) is able to handle an ESD current in excess of 1.5 A, whereas the capacitance at zero bias is kept at 94 fF.

Journal Title

Ieee Electron Device Letters

Volume

34

Issue/Number

2

Publication Date

1-1-2013

Document Type

Article

Language

English

First Page

178

Last Page

180

WOS Identifier

WOS:000314173200010

ISSN

0741-3106

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