GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application

    Authors

    A. Das; A. Das; L. B. Chang; C. S. Lai; R. M. Lin; F. C. Chu; Y. H. Lin; L. Chow;M. J. Jeng

    Comments

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    Abbreviated Journal Title

    Appl. Phys. Express

    Keywords

    CARRIER DIFFUSION LENGTH; SPATIAL-RESOLUTION; PULSE TECHNIQUE; LAPS; CAPACITORS; PENICILLIN; NITRIDE; DEVICES; SILICON; Physics, Applied

    Abstract

    Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si3N4 similar to 50nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365 nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaN-based LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution. (C) 2013 The Japan Society of Applied Physics

    Journal Title

    Applied Physics Express

    Volume

    6

    Issue/Number

    3

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    3

    WOS Identifier

    WOS:000315938100031

    ISSN

    1882-0778

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