GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application
Abbreviated Journal Title
Appl. Phys. Express
Keywords
CARRIER DIFFUSION LENGTH; SPATIAL-RESOLUTION; PULSE TECHNIQUE; LAPS; CAPACITORS; PENICILLIN; NITRIDE; DEVICES; SILICON; Physics, Applied
Abstract
Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si3N4 similar to 50nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365 nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaN-based LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution. (C) 2013 The Japan Society of Applied Physics
Journal Title
Applied Physics Express
Volume
6
Issue/Number
3
Publication Date
1-1-2013
Document Type
Article
Language
English
First Page
3
WOS Identifier
ISSN
1882-0778
Recommended Citation
"GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application" (2013). Faculty Bibliography 2010s. 3856.
https://stars.library.ucf.edu/facultybib2010/3856
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