Investigation of the Internal Back Reflectance of Rear-Side Dielectric Stacks for c-Si Solar Cells
Abbreviated Journal Title
IEEE J. Photovolt.
Keywords
Characterization; dielectric films; metrology; optics; photovoltaic; cells; silicon; Si photovoltaics (PV) modeling; FILM CRYSTALLINE SILICON; LAYER-DEPOSITED AL2O3; EFFICIENCY; LIGHT; Energy & Fuels; Materials Science, Multidisciplinary; Physics, Applied
Abstract
This paper addresses the calculation of internal back reflectance for various dielectrics that are used in rear-side passivated crystalline silicon solar cells. Optical modeling of various stack configurations is examined to explore the back-surface reflectance at the Si-dielectric interface for different film combinations and thicknesses as a function of wavelength and internal angle of incidence at the rear side. Specifically, configurations using aluminum oxide (AlOx), silicon nitride (SiNx), titanium dioxide (TiO2), and silicon dioxide (SiO2) were investigated with a focus on designing stack configurations that will also allow for high-quality passivation and are compatible with a high-volume manufacturing environment. In addition, samples were fabricated by plasma-enhanced and atmospheric pressure chemical vapor deposition of thin dielectric films onto polished and textured monocrystalline silicon wafers. Spectral reflectance curves of the samples are presented to supplement and validate the conclusions that are obtained from the optical modeling data.
Journal Title
Ieee Journal of Photovoltaics
Volume
3
Issue/Number
2
Publication Date
1-1-2013
Document Type
Article
Language
English
First Page
641
Last Page
648
WOS Identifier
ISSN
2156-3381
Recommended Citation
"Investigation of the Internal Back Reflectance of Rear-Side Dielectric Stacks for c-Si Solar Cells" (2013). Faculty Bibliography 2010s. 3864.
https://stars.library.ucf.edu/facultybib2010/3864
Comments
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