Improved control of the phosphorous surface concentration during in-line diffusion of c-Si solar cells by APCVD

    Authors

    K. O. Davis; K. Y. Jiang; C. Demberger; H. Zunft; H. Haverkamp; D. Habermann;W. V. Schoenfeld

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Phys. Status Solidi-Rapid Res. Lett.

    Keywords

    silicon; solar cells; APCVD; silicate glasses; phosphorus; diffusion; SPRAY-ON SOURCE; SILICON; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Emitter formation for industrial crystalline silicon (c-Si) solar cells is demonstrated by the deposition of phosphorous-doped silicate glasses (PSG) on p-type monocrystalline silicon wafers via in-line atmospheric pressure chemical vapor deposition (APCVD) and subsequent thermal diffusion. Processed wafers with and without the PSG layers have been analysed by SIMS measurements to investigate the depth profiles of the resultant phosphorous emitters. Subsequently, complete solar cells were fabricated using the phosphorous emitters formed by doped silicate glasses to determine the impact of this high-throughput doping method on cell performance. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

    Journal Title

    Physica Status Solidi-Rapid Research Letters

    Volume

    7

    Issue/Number

    5

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    319

    Last Page

    321

    WOS Identifier

    WOS:000318984500007

    ISSN

    1862-6254

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