Low-Capacitance SCR Structure for RF I/O Application

    Authors

    S. R. Dong; M. Miao; J. Wu; J. Zeng; Z. W. Liu;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electromagn. Compat.

    Keywords

    Electrostatic discharge (ESD); parasitic capacitance; radio frequency; (RF); ESD PROTECTION; DESIGN; Engineering, Electrical & Electronic; Telecommunications

    Abstract

    Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated on both ESD and RF performance. Varying from the architecture, layout design and metal interconnection, candidate devices show different parasitic capacitance, ESD efficiency, and turn on speed. Potential solution for further RF I/O application is verified.

    Journal Title

    Ieee Transactions on Electromagnetic Compatibility

    Volume

    55

    Issue/Number

    2

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    241

    Last Page

    247

    WOS Identifier

    WOS:000317863100003

    ISSN

    0018-9375

    Share

    COinS