Title

Low-Capacitance SCR Structure for RF I/O Application

Authors

Authors

S. R. Dong; M. Miao; J. Wu; J. Zeng; Z. W. Liu;J. J. Liou

Comments

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Abbreviated Journal Title

IEEE Trans. Electromagn. Compat.

Keywords

Electrostatic discharge (ESD); parasitic capacitance; radio frequency; (RF); ESD PROTECTION; DESIGN; Engineering, Electrical & Electronic; Telecommunications

Abstract

Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated on both ESD and RF performance. Varying from the architecture, layout design and metal interconnection, candidate devices show different parasitic capacitance, ESD efficiency, and turn on speed. Potential solution for further RF I/O application is verified.

Journal Title

Ieee Transactions on Electromagnetic Compatibility

Volume

55

Issue/Number

2

Publication Date

1-1-2013

Document Type

Article

Language

English

First Page

241

Last Page

247

WOS Identifier

WOS:000317863100003

ISSN

0018-9375

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