Low-Capacitance SCR Structure for RF I/O Application
Abbreviated Journal Title
IEEE Trans. Electromagn. Compat.
Electrostatic discharge (ESD); parasitic capacitance; radio frequency; (RF); ESD PROTECTION; DESIGN; Engineering, Electrical & Electronic; Telecommunications
Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated on both ESD and RF performance. Varying from the architecture, layout design and metal interconnection, candidate devices show different parasitic capacitance, ESD efficiency, and turn on speed. Potential solution for further RF I/O application is verified.
Ieee Transactions on Electromagnetic Compatibility
"Low-Capacitance SCR Structure for RF I/O Application" (2013). Faculty Bibliography 2010s. 3900.