Study of graphene field-effect transistors under electrostatic discharge stresses

    Authors

    S. R. Dong; L. Zhong; J. Zeng; W. Guo; H. W. Li; J. Wang; Z. G. Guo;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Electron. Lett.

    Keywords

    Engineering, Electrical & Electronic

    Abstract

    Graphene field-effect transistors (GFETs) are characterised for the first time under electrostatic discharge stresses. The GFETs are measured from the transmission line pulsing (TLP) tester and very fast TLP (VFTLP) tester. The turn-on behaviour influenced by back gate voltage is investigated. The I-V curve of the GFETs shows no characteristic of snapback from TLP or VFTLP measurement.

    Journal Title

    Electronics Letters

    Volume

    49

    Issue/Number

    17

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    1086

    Last Page

    1087

    WOS Identifier

    WOS:000323552900027

    ISSN

    0013-5194

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