Authors

N. N. Esfahani; R. E. Peale; W. R. Buchwald; C. J. Fredricksen; J. R. Hendrickson;J. W. Cleary

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

FIELD-EFFECT TRANSISTORS; MODES; Physics, Applied

Abstract

A polarized photoresponse to mm-wave radiation over the frequency range of 40 to 108 GHz is demonstrated in a grating-gated high electron mobility transistor (HEMT) formed by an InGaAs/InP heterostructure. The photoresponse is observed within the plasmon resonance absorption band of the HEMT, whose gate consists of a 9 mu m period grating that couples incident radiation to plasmons in the 2D electron gas. Gate-bias changes the channel carrier concentration, causing a corresponding change in photoresponse in agreement with theoretical expectations for the shift in the plasmon resonance band. The noise equivalent power is estimated to be 235 pW/Hz(1/2).

Journal Title

Journal of Applied Physics

Volume

114

Issue/Number

3

Publication Date

1-1-2013

Document Type

Article

Language

English

First Page

5

WOS Identifier

WOS:000322202700005

ISSN

0021-8979

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