Thermo-Mechanical Characterization of Au-In Transient Liquid Phase Bonding Die-Attach

    Authors

    B. J. Grummel; Z. J. Shen; H. A. Mustain;A. R. Hefner

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Compon. Pack. Manuf. Technol.

    Keywords

    Au-In; die-attach; high temperature; packaging; power semiconductor; reliability; shear strength; silicon carbide; solid liquid; interdiffusion; thermal cycling; transient liquid phase bonding; widebandgap; ROOM-TEMPERATURE; GOLD-INDIUM; INTERDIFFUSION; SYSTEMS; PACKAGES; Engineering, Manufacturing; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary

    Abstract

    Semiconductor die-attach techniques are critically important in the implementation of high-temperature wide-bandgap power devices. In this paper, thermal and mechanical characteristics of Au-In transient liquid phase (TLP) die-attach are examined for SiC devices. Samples with SiC diodes TLP-bonded to copper-metalized silicon nitride substrates are made using several different values for such fabrication properties as gold and indium thickness, Au/In ratio, and bonding pressure. The samples are then characterized for die-attach voiding, shear strength, and thermal impedance. It is found that the Au-In TLP-bonded samples offer a high average shear strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction through the substrate. It is also discovered that some of the fabrication properties have a greater influence on the bond characteristics than others. Overall, TLP bonding remains promising for high-temperature power electronic die-attach.

    Journal Title

    Ieee Transactions on Components Packaging and Manufacturing Technology

    Volume

    3

    Issue/Number

    5

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    716

    Last Page

    723

    WOS Identifier

    WOS:000318702100002

    ISSN

    2156-3950

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