ZnO p-n Homojunction Random Laser Diode Based on Nitrogen-Doped p-type Nanowires

    Authors

    J. Huang; S. Chu; J. Y. Kong; L. Zhang; C. M. Schwarz; G. P. Wang; L. Chernyak; Z. H. Chen;J. L. Liu

    Comments

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    Abbreviated Journal Title

    Adv. Opt. Mater.

    Keywords

    MOLECULAR-BEAM EPITAXY; STIMULATED-EMISSION; THIN-FILMS; ARRAYS; GAIN; PHOTOLUMINESCENCE; SPECTROSCOPY; ACCEPTOR; DEVICES; EXCITON; Materials Science, Multidisciplinary; Optics

    Abstract

    An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin film on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated field-effect transistor, as well as low-temperature photoluminescence. The formation of the p-n junction is confirmed by the current-voltage characteristic and electron beam-induced current. The nanowire/thin-film p-n junction acts as random laser diode. The random lasing behavior is demonstrated by using both optical pumping and electrical pumping, with thresholds of 300 kW/cm(2) and 40 mA, respectively. The angle-dependant electroluminescence of the device further proves the random lasing mechanism. An output power of 70 nW is measured at a drive current of 70 mA.

    Journal Title

    Advanced Optical Materials

    Volume

    1

    Issue/Number

    2

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    179

    Last Page

    185

    WOS Identifier

    WOS:000320997900011

    ISSN

    2195-1071

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