Experimental evaluation of hot electron reliability on differential Clapp-VCO

    Authors

    S. L. Jang; J. S. Yuan; S. D. Yen; E. Kritchanchai;G. W. Huang

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    LOW-FREQUENCY NOISE; CARRIER DEGRADATION; MOS-TRANSISTORS; MOSFETS; STRESS; PERFORMANCE; GENERATION; STATE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This paper studies the hot-carrier stressed property of a series-tuned all-n core voltage controlled oscillator (VCO). A differential Clapp-VCO has been successfully implemented in the 0.13 m CMOS process and it uses a series-tuned resonator. Two single ended nMOS-core Clapp-VCOs are used to form a differential VCO by the aid of a cross-coupled nMOS pair and a transformer. The measured results show that the fresh Clapp-VCO operates from 18.8 to 22.2 GHz and hot-carrier stressed experimental data indicate that the damage increases the oscillation frequency and degrades the phase noise of oscillator. Mixed-mode simulation results are used to show the hot-carrier physics to the circuit. (C) 2012 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    53

    Issue/Number

    2

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    254

    Last Page

    258

    WOS Identifier

    WOS:000315614600012

    ISSN

    0026-2714

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