Title
Experimental evaluation of hot electron reliability on differential Clapp-VCO
Abbreviated Journal Title
Microelectron. Reliab.
Keywords
LOW-FREQUENCY NOISE; CARRIER DEGRADATION; MOS-TRANSISTORS; MOSFETS; STRESS; PERFORMANCE; GENERATION; STATE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
This paper studies the hot-carrier stressed property of a series-tuned all-n core voltage controlled oscillator (VCO). A differential Clapp-VCO has been successfully implemented in the 0.13 m CMOS process and it uses a series-tuned resonator. Two single ended nMOS-core Clapp-VCOs are used to form a differential VCO by the aid of a cross-coupled nMOS pair and a transformer. The measured results show that the fresh Clapp-VCO operates from 18.8 to 22.2 GHz and hot-carrier stressed experimental data indicate that the damage increases the oscillation frequency and degrades the phase noise of oscillator. Mixed-mode simulation results are used to show the hot-carrier physics to the circuit. (C) 2012 Elsevier Ltd. All rights reserved.
Journal Title
Microelectronics Reliability
Volume
53
Issue/Number
2
Publication Date
1-1-2013
Document Type
Article
Language
English
First Page
254
Last Page
258
WOS Identifier
ISSN
0026-2714
Recommended Citation
"Experimental evaluation of hot electron reliability on differential Clapp-VCO" (2013). Faculty Bibliography 2010s. 4151.
https://stars.library.ucf.edu/facultybib2010/4151
Comments
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