Authors

S. Khan; J. Chiles; J. Ma;S. Fathpour

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

WAFER; GERMANIUM; AMPLIFIER; ADHESIVE; GLASS; Physics, Applied

Abstract

Silicon-on-nitride ridge waveguides are demonstrated and characterized at mid-and near-infrared optical wavelengths. Silicon-on-nitride thin films were achieved by bonding a silicon handling die to a silicon-on-insulator die coated with a low-stress silicon nitride layer. Subsequent removal of the silicon-on-insulator substrate results in a thin film of silicon on a nitride bottom cladding, readily available for waveguide fabrication. At the mid-infrared wavelength of 3.39 mu m, the fabricated waveguides have a propagation loss of 5.2 +/- 0.6 dB/cm and 5.1 +/- 0.6 dB/cm for the transverse-electric and transverse-magnetic modes, respectively.

Journal Title

Applied Physics Letters

Volume

102

Issue/Number

12

Publication Date

1-1-2013

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000316967100004

ISSN

0003-6951

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