Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
WAFER; GERMANIUM; AMPLIFIER; ADHESIVE; GLASS; Physics, Applied
Abstract
Silicon-on-nitride ridge waveguides are demonstrated and characterized at mid-and near-infrared optical wavelengths. Silicon-on-nitride thin films were achieved by bonding a silicon handling die to a silicon-on-insulator die coated with a low-stress silicon nitride layer. Subsequent removal of the silicon-on-insulator substrate results in a thin film of silicon on a nitride bottom cladding, readily available for waveguide fabrication. At the mid-infrared wavelength of 3.39 mu m, the fabricated waveguides have a propagation loss of 5.2 +/- 0.6 dB/cm and 5.1 +/- 0.6 dB/cm for the transverse-electric and transverse-magnetic modes, respectively.
Journal Title
Applied Physics Letters
Volume
102
Issue/Number
12
Publication Date
1-1-2013
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Khan, Saeed; Chiles, Jeff; Ma, Jichi; and Fathpour, Sasan, "Silicon-on-nitride waveguides for mid- and near-infrared integrated photonics" (2013). Faculty Bibliography 2010s. 4200.
https://stars.library.ucf.edu/facultybib2010/4200
Comments
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