Effects of laser scans on the diffusion depth and diffusivity of gallium in n-type 4H-SiC during laser doping (vol 176, pg 660, 2011)
Abbreviated Journal Title
Mater. Sci. Eng. B-Adv. Funct. Solid-State Mater.
Keywords
Materials Science, Multidisciplinary; Physics, Condensed Matter
Journal Title
Materials Science and Engineering B-Advanced Functional Solid-State Materials
Volume
178
Issue/Number
4
Publication Date
1-1-2013
Document Type
Correction
Language
English
First Page
282
Last Page
282
WOS Identifier
ISSN
0921-5107
Recommended Citation
"Effects of laser scans on the diffusion depth and diffusivity of gallium in n-type 4H-SiC during laser doping (vol 176, pg 660, 2011)" (2013). Faculty Bibliography 2010s. 4308.
https://stars.library.ucf.edu/facultybib2010/4308
Accessibility Statement
This item was created or digitized prior to April 24, 2027, or is a reproduction of legacy media created before that date. It is preserved in its original, unmodified state specifically for research, reference, or historical recordkeeping. In accordance with the ADA Title II Final Rule, the University Libraries provides accessible versions of archival materials upon request. To request an accommodation for this item, please submit an accessibility request form.
Comments
Authors: contact us about adding a copy of your work at [email protected]