Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators
Abbreviated Journal Title
Opt. Lett.
Keywords
PHOTONIC CRYSTAL CAVITIES; GE-SB-S; WAVE-GUIDES; PHOTOTHERMAL; SPECTROSCOPY; STRUCTURAL-PROPERTIES; FABRICATION; DESIGN; FILMS; Optics
Abstract
We demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The resonators exhibited a high intrinsic quality factor of 2 x 10(5) at 5.2 mu m wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. The resonator can serve as a key building block for mid-IR planar photonic circuits. (C) 2013 Optical Society of America
Journal Title
Optics Letters
Volume
38
Issue/Number
9
Publication Date
1-1-2013
Document Type
Article
Language
English
First Page
1470
Last Page
1472
WOS Identifier
ISSN
0146-9592
Recommended Citation
"Demonstration of high-Q mid-infrared chalcogenide glass-on-silicon resonators" (2013). Faculty Bibliography 2010s. 4311.
https://stars.library.ucf.edu/facultybib2010/4311
Accessibility Statement
This item was created or digitized prior to April 24, 2027, or is a reproduction of legacy media created before that date. It is preserved in its original, unmodified state specifically for research, reference, or historical recordkeeping. In accordance with the ADA Title II Final Rule, the University Libraries provides accessible versions of archival materials upon request. To request an accommodation for this item, please submit an accessibility request form.
Comments
Authors: contact us about adding a copy of your work at [email protected]