Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure

    Authors

    Y. T. Lin; C. S. Huang; L. Chow; J. M. Lan; C. M. Yang; L. B. Chang;C. S. Lai

    Comments

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    Abbreviated Journal Title

    Appl. Phys. Express

    Keywords

    FIELD-EFFECT TRANSISTOR; SILICON-CARBIDE; SURFACE; PLASMA; IMMOBILIZATION; MEMBRANES; SHIELD; ENZYME; Physics, Applied

    Abstract

    An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity. (C) 2013 The Japan Society of Applied Physics

    Journal Title

    Applied Physics Express

    Volume

    6

    Issue/Number

    12

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    4

    WOS Identifier

    WOS:000328160900036

    ISSN

    1882-0778

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