Controlled argon beam-induced desulfurization of monolayer molybdenum disulfide

    Authors

    Q. Ma; P. M. Odenthal; J. Mann; D. Le; C. S. Wang; Y. M. Zhu; T. Y. Chen; D. Z. Sun; K. Yamaguchi; T. Tran; M. Wurch; J. L. McKinley; J. Wyrick; K. Magnone; T. F. Heinz; T. S. Rahman; R. Kawakami;L. Bartels

    Comments

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    Abbreviated Journal Title

    J. Phys.-Condes. Matter

    Keywords

    FIELD-EFFECT TRANSISTORS; ATOMIC-SCALE STRUCTURE; AUGMENTED-WAVE METHOD; ACTIVE EDGE SITES; HYDROTREATING CATALYSTS; LARGE-AREA; VALLEY; POLARIZATION; MOS2 NANOCATALYSTS; MOLECULAR-DYNAMICS; MO6S6 NANOWIRES; Physics, Condensed Matter

    Abstract

    Sputtering of MoS2 films of single-layer thickness by low-energy argon ions selectively reduces the sulfur content of the material without significant depletion of molybdenum. X-ray photoelectron spectroscopy shows little modification of the Mo 3d states during this process, suggesting the absence of significant reorganization or damage to the overall structure of the MoS2 film. Accompanying ab initio molecular dynamics simulations find clusters of sulfur vacancies in the top plane of single-layer MoS2 to be structurally stable. Measurements of the photoluminescence at temperatures between 175 and 300 K show quenching of almost 80% for an similar to 10% decrease in sulfur content.

    Journal Title

    Journal of Physics-Condensed Matter

    Volume

    25

    Issue/Number

    25

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    5

    WOS Identifier

    WOS:000320110200001

    ISSN

    0953-8984

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