Revisiting MOSFET threshold voltage extraction methods

    Authors

    A. Ortiz-Conde; F. J. Garcia-Sanchez; J. Muci; A. T. Barrios; J. J. Liou;C. S. Ho

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    DIFFERENCE OPERATOR METHOD; FIELD-EFFECT TRANSISTORS; EFFECTIVE; CHANNEL-LENGTH; PARAMETER EXTRACTION; SERIES RESISTANCE; SUBTHRESHOLD; BEHAVIOR; MOBILITY DEGRADATION; CIRCUIT SIMULATION; SUBMICRON MOSFETS; ACCURATE METHOD; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This article presents an up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs. It includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSFETs. The various methods presented for the linear region are adapted to the saturation region and tested as a function of drain voltage whenever possible. The implementation of the extraction methods is discussed and tested by applying them to real state-of-the-art devices in order to compare their performance. The validity of the different methods with respect to the presence of parasitic series resistance is also evaluated using 2-D simulations. (C) 2012 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    53

    Issue/Number

    1

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    90

    Last Page

    104

    WOS Identifier

    WOS:000314258600012

    ISSN

    0026-2714

    Share

    COinS