Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance

    Authors

    X. Liu; J. S. Yuan;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This paper investigates the electro-thermal stress-induced performance degradation of a cascode low-noise amplifier built using advanced InGaP/GaAs heterojunction bipolar transistors. Changes in device characteristics due to the electro-thermal stress are examined experimentally. SPICE Gummel-Poon model parameters extracted from the pre- and post-stress HBT measurement data are then used in Cadence SpectreRF simulator to study the impact of the electro-thermal stress on the InGaP/GaAs LNA's RF performance. (C) 2009 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    50

    Issue/Number

    3

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    365

    Last Page

    369

    WOS Identifier

    WOS:000275993100009

    ISSN

    0026-2714

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