Title

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Authors

Authors

Z. W. Liu; J. J. Liou; S. R. Dong;Y. Han

Comments

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Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

Electrostatic discharge (ESD); high holding voltage; latchup; silicon-controlled rectifier (SCR); SCR; Engineering, Electrical & Electronic

Abstract

Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not suited for high-voltage ESD due to their inherent low holding voltage and, thus, vulnerability to latchup. In this letter, a novel SCR stacking structure with an extremely high holding voltage, very small snapback, and acceptable failure current has been developed. The new and existing high holding voltage ESD devices are also compared to demonstrate the advancement of this work.

Journal Title

Ieee Electron Device Letters

Volume

31

Issue/Number

8

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

845

Last Page

847

WOS Identifier

WOS:000283376800023

ISSN

0741-3106

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