Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

    Authors

    Z. W. Liu; J. J. Liou; S. R. Dong;Y. Han

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    Electrostatic discharge (ESD); high holding voltage; latchup; silicon-controlled rectifier (SCR); SCR; Engineering, Electrical & Electronic

    Abstract

    Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not suited for high-voltage ESD due to their inherent low holding voltage and, thus, vulnerability to latchup. In this letter, a novel SCR stacking structure with an extremely high holding voltage, very small snapback, and acceptable failure current has been developed. The new and existing high holding voltage ESD devices are also compared to demonstrate the advancement of this work.

    Journal Title

    Ieee Electron Device Letters

    Volume

    31

    Issue/Number

    8

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    845

    Last Page

    847

    WOS Identifier

    WOS:000283376800023

    ISSN

    0741-3106

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