Influence of annealing on the optical properties of reactively sputtered BCN thin films

    Authors

    V. O. Todi; B. P. Shantheyanda;K. B. Sundaram

    Comments

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    Abbreviated Journal Title

    Mater. Chem. Phys.

    Keywords

    Annealing; Sputtering; Optical properties; Thin films; X-ray; photo-emission spectroscopy (XPS); CHEMICAL-VAPOR-DEPOSITION; BORON CARBONITRIDE FILMS; ELECTRONIC-STRUCTURE; NITRIDE; COATINGS; AUGER; B2O3; BN; Materials Science, Multidisciplinary

    Abstract

    Optical properties of the Boron Carbon Nitride (BCN) thin films deposited in a multi gun radio frequency (rf) magnetron sputtering system using a B4C target have been studied. Films of different compositions were deposited by varying the ratio of argon and nitrogen in the sputtering ambient. The films were annealed in dry oxygen ambient in the temperature range of 300 degrees C-700 degrees C. The effect of annealing on the optical properties of the films was investigated. It was found that the optical transmission of the films increased with nitrogen incorporation. Annealing at higher temperatures leads to considerable increase in optical transmission. Optical energy gaps (Tauc gap) calculated from the absorption data are influenced by annealing temperatures. Changes in optical properties were correlated to the chemical modifications in the films due to annealing through X-ray photoelectron spectroscopy (XPS). Studies reveal that the carbon and nitrogen concentrations in the films are highly sensitive to temperature. Annealing at higher temperatures leads to broken C-N bonds which results in the loss of C and N in the films. This is believed to be the primary cause for variations in optical properties of the films. (c) 2013 Elsevier B.V. All rights reserved.

    Journal Title

    Materials Chemistry and Physics

    Volume

    141

    Issue/Number

    2-3

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    596

    Last Page

    601

    WOS Identifier

    WOS:000323806600002

    ISSN

    0254-0584

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