Synthesis and characterization of ZnO nanowires for nanosensor applications

    Authors

    O. Lupan; G. A. Emelchenko; V. V. Ursaki; G. Chai; A. N. Redkin; A. N. Gruzintsev; I. M. Tiginyanu; L. Chow; L. K. Ono; B. R. Cuenya; H. Heinrich;E. E. Yakimov

    Comments

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    Abbreviated Journal Title

    Mater. Res. Bull.

    Keywords

    Semiconductors; Vapor deposition; Raman spectroscopy; Crystal structure; Optical properties; RAY PHOTOELECTRON-SPECTROSCOPY; AUGER-ELECTRON-SPECTROSCOPY; HYDROGEN; GAS NANOSENSOR; NANOROD ARRAYS; THIN-FILMS; OXIDE NANOSTRUCTURES; ROOM-TEMPERATURE; SURFACE; GROWTH; FABRICATION; Materials Science, Multidisciplinary

    Abstract

    In this paper we report the synthesis of ZnO nanowires via chemical vapor deposition (CVD) at 650 degrees C. It will be shown that these nanowires are suitable for sensing applications. ZnO nanowires were grown with diameters ranging from 50 to 200 nm depending on the substrate position in a CVD synthesis reactor and the growth regimes. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman spectroscopy (RS) have been used to characterize the ZnO nanowires. To investigate the suitability of the CVD synthesized ZnO nanowires for gas sensing applications, a single ZnO nanowire device (50 rim in diameter) was fabricated using a focused ion beam (FIB). The response to H-2 of a gas nanosensor based on an individual ZnO nanowire is also reported. (C) 2010 Elsevier Ltd. All rights reserved.

    Journal Title

    Materials Research Bulletin

    Volume

    45

    Issue/Number

    8

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    1026

    Last Page

    1032

    WOS Identifier

    WOS:000279597100022

    ISSN

    0025-5408

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