Title

Reliability analysis of pHEMT power amplifier with an on-chip linearizer

Authors

Authors

J. S. Yuan; Y. Wang; J. Steighner; H. D. Yen; S. L. Jang; G. W. Huang;W. K. Yeh

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

ALGAAS/INGAAS/GAAS PHEMTS; DEGRADATION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

The hot carrier reliability and self-heating of the Al0.3Ga0.7As/In0.25Ga0.75As pHEMT has been examined using Mixed-mode simulation. A two-stage power amplifier using 0.15 gm InGaAs pHEMT technology with an on-chip linearizer has been designed and fabricated for the evaluation of electrical stress on RF circuit performances. The power amplifier was subjected to high RF input power while doubling the supply voltage for accelerated aging. The experimental data of the amplifier's output power, power-added efficiency, and linearity show little changes after 10 h of continuous RF stress. (C) 2013 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

53

Issue/Number

6

Publication Date

1-1-2013

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/j.microrel.2013.02.010

Language

English

First Page

878

Last Page

884

WOS Identifier

WOS:000320424800014

ISSN

0026-2714

Recommended Citation

"Reliability analysis of pHEMT power amplifier with an on-chip linearizer" (2013). Faculty Bibliography 2010s. 4911.
https://stars.library.ucf.edu/facultybib2010/4911