Reliability analysis of pHEMT power amplifier with an on-chip linearizer

    Authors

    J. S. Yuan; Y. Wang; J. Steighner; H. D. Yen; S. L. Jang; G. W. Huang;W. K. Yeh

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    ALGAAS/INGAAS/GAAS PHEMTS; DEGRADATION; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The hot carrier reliability and self-heating of the Al0.3Ga0.7As/In0.25Ga0.75As pHEMT has been examined using Mixed-mode simulation. A two-stage power amplifier using 0.15 gm InGaAs pHEMT technology with an on-chip linearizer has been designed and fabricated for the evaluation of electrical stress on RF circuit performances. The power amplifier was subjected to high RF input power while doubling the supply voltage for accelerated aging. The experimental data of the amplifier's output power, power-added efficiency, and linearity show little changes after 10 h of continuous RF stress. (C) 2013 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    53

    Issue/Number

    6

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    878

    Last Page

    884

    WOS Identifier

    WOS:000320424800014

    ISSN

    0026-2714

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