Title
IR permittivities for silicides and doped silicon
Abbreviated Journal Title
J. Opt. Soc. Am. B-Opt. Phys.
Keywords
OPTICAL-PROPERTIES; NICKEL SILICIDES; WAVE-GUIDE; CONSTANTS; FILMS; ELLIPSOMETRY; WAVELENGTH; DISILICIDE; METALS; PD2SI; Optics
Abstract
The complex permittivity for Pt, Pd, Ni, and Ti-silicide films as well as heavily doped p-and n-type silicon were determined by ellipsometry over the energy range 0.031 eV to 4.0 eV. Fits to the Drude model gave bulk plasma and relaxation frequencies. Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy, secondary ion mass spectrometry, and four-point probe measurements complemented the optical characterization. Calculations from measured permittivities of waveguide loss and mode confinement suggest that the considered materials are better suited for long-wavelength surface-plasmon-polariton waveguide applications than metal films. (C) 2010 Optical Society of America
Journal Title
Journal of the Optical Society of America B-Optical Physics
Volume
27
Issue/Number
4
Publication Date
1-1-2010
Document Type
Article
Language
English
First Page
730
Last Page
734
WOS Identifier
ISSN
0740-3224
Recommended Citation
"IR permittivities for silicides and doped silicon" (2010). Faculty Bibliography 2010s. 50.
https://stars.library.ucf.edu/facultybib2010/50
Comments
Authors: contact us about adding a copy of your work at STARS@ucf.edu