IR permittivities for silicides and doped silicon

    Authors

    J. W. Cleary; R. E. Peale; D. J. Shelton; G. D. Boreman; C. W. Smith; M. Ishigami; R. Soref; A. Drehman;W. R. Buchwald

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    J. Opt. Soc. Am. B-Opt. Phys.

    Keywords

    OPTICAL-PROPERTIES; NICKEL SILICIDES; WAVE-GUIDE; CONSTANTS; FILMS; ELLIPSOMETRY; WAVELENGTH; DISILICIDE; METALS; PD2SI; Optics

    Abstract

    The complex permittivity for Pt, Pd, Ni, and Ti-silicide films as well as heavily doped p-and n-type silicon were determined by ellipsometry over the energy range 0.031 eV to 4.0 eV. Fits to the Drude model gave bulk plasma and relaxation frequencies. Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy, secondary ion mass spectrometry, and four-point probe measurements complemented the optical characterization. Calculations from measured permittivities of waveguide loss and mode confinement suggest that the considered materials are better suited for long-wavelength surface-plasmon-polariton waveguide applications than metal films. (C) 2010 Optical Society of America

    Journal Title

    Journal of the Optical Society of America B-Optical Physics

    Volume

    27

    Issue/Number

    4

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    730

    Last Page

    734

    WOS Identifier

    WOS:000276196000018

    ISSN

    0740-3224

    Share

    COinS