Title

Cubic ZnxMg1-xO thin films grown by plasma-assisted molecular-beam epitaxy for optoelectronic applications

Authors

Authors

J. W. Mares; R. C. Boutwell; A. Scheurer;W. V. Schoenfeld

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Mater. Res.

Keywords

PULSED-LASER DEPOSITION; REFRACTIVE-INDEXES; ALLOY-FILMS; BAND-GAP; ELECTRICAL-PROPERTIES; MG(X)ZN1-XO ALLOYS; OPTICAL-PROPERTIES; MGXZN1-XO; FILMS; PLANE SAPPHIRE; BUFFER LAYER; Materials Science, Multidisciplinary

Abstract

Heteroepitaxial ZnxMg1-xO thin films were grown on lattice-matched MgO (100) substrates using radiofrequency plasma-assisted molecular-beam epitaxy. High-quality epilayers with zinc concentrations ranging from x = 0 (MgO) to x = 0.65 were grown and characterized optically, structurally, and electrically. The ZnxMg1-xO films were found to maintain the rocksalt cubic (B1) crystal structure for concentrations z < 0.65, with a linear dependence of lattice constant on Zn concentration. X-ray diffraction (XRD) also revealed the emergence of phase segregation into wurtzite (B4) phase for the highest concentration film. The band gap energy of the films was successfully varied from 4.9 to 6.2 eV (253-200 nm), showing a linear relationship with Zn concentration. The strictly cubic films exhibit roughness on the order of 10 angstrom and resistivities of approximately 10(6) Omega.cm.

Journal Title

Journal of Materials Research

Volume

25

Issue/Number

6

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

1072

Last Page

1079

WOS Identifier

WOS:000278161900012

ISSN

0884-2914

Share

COinS