Cubic ZnxMg1-xO thin films grown by plasma-assisted molecular-beam epitaxy for optoelectronic applications

    Authors

    J. W. Mares; R. C. Boutwell; A. Scheurer;W. V. Schoenfeld

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    J. Mater. Res.

    Keywords

    PULSED-LASER DEPOSITION; REFRACTIVE-INDEXES; ALLOY-FILMS; BAND-GAP; ELECTRICAL-PROPERTIES; MG(X)ZN1-XO ALLOYS; OPTICAL-PROPERTIES; MGXZN1-XO; FILMS; PLANE SAPPHIRE; BUFFER LAYER; Materials Science, Multidisciplinary

    Abstract

    Heteroepitaxial ZnxMg1-xO thin films were grown on lattice-matched MgO (100) substrates using radiofrequency plasma-assisted molecular-beam epitaxy. High-quality epilayers with zinc concentrations ranging from x = 0 (MgO) to x = 0.65 were grown and characterized optically, structurally, and electrically. The ZnxMg1-xO films were found to maintain the rocksalt cubic (B1) crystal structure for concentrations z < 0.65, with a linear dependence of lattice constant on Zn concentration. X-ray diffraction (XRD) also revealed the emergence of phase segregation into wurtzite (B4) phase for the highest concentration film. The band gap energy of the films was successfully varied from 4.9 to 6.2 eV (253-200 nm), showing a linear relationship with Zn concentration. The strictly cubic films exhibit roughness on the order of 10 angstrom and resistivities of approximately 10(6) Omega.cm.

    Journal Title

    Journal of Materials Research

    Volume

    25

    Issue/Number

    6

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    1072

    Last Page

    1079

    WOS Identifier

    WOS:000278161900012

    ISSN

    0884-2914

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