Title
Mid-infrared integrated waveguide modulators based on silicon-on-lithium-niobate photonics
Abbreviated Journal Title
Optica
Keywords
MU-M; SUPERCONTINUUM GENERATION; RESONATORS; COMPONENTS; TELECOM; Optics
Abstract
Heterogeneous integration techniques, such as direct bonding, have enabled solutions to many problems facing integrated photonics. In particular, the relatively new field of mid-infrared (mid-IR) integrated photonics has been hindered by the availability of functional, transparent substrates in this wavelength range. The key to achieving compact, high-performance optical modulation and frequency conversion is the monolithic integration of silicon photonics with a material with high second-order nonlinear susceptibility. By transferring large areas of thin, monocrystalline silicon to bulk lithium niobate (LiNbO3) substrates, the first silicon-based platform to exploit the Pockels or linear electro-optic effect in the mid-IR range is achieved. Integrated Mach-Zehnder interferometer modulators with an extinction ratio of similar to 8 dB, a half-wave voltage-length product of 26 V.cm, and an on-chip insertion loss of 3.3 dB are demonstrated at a wavelength of 3.39 mu m. Ultrathin optical waveguides fabricated and characterized on this platform exhibit a low transverse electric mode linear propagation loss of 2.5 dB/cm. Future capabilities such as wideband difference frequency generation for integrated mid-IR sources are envisioned for the demonstrated silicon-on-lithium-niobate platform. (C) 2014 Optical Society of America
Journal Title
Optica
Volume
1
Issue/Number
5
Publication Date
1-1-2014
Document Type
Article
Language
English
First Page
350
Last Page
355
WOS Identifier
ISSN
2334-2536
Recommended Citation
"Mid-infrared integrated waveguide modulators based on silicon-on-lithium-niobate photonics" (2014). Faculty Bibliography 2010s. 5178.
https://stars.library.ucf.edu/facultybib2010/5178
Comments
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