Title

Design optimization of SiGe BiCMOS Silicon Controlled Rectifier for Charged Device Model (CDM) protection applications

Authors

Authors

Q. Cui; S. Parthasarathy; J. A. Salcedo; J. J. Liou; J. J. Hajjar;Y. Z. Zhou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

ESD PROTECTION; TECHNOLOGIES; SCRS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Silicon Controlled Rectifier (SCR) devices fabricated in a SiGe BiCMOS technology are optimized for Charged Device Model (CDM) Electrostatic Discharge (ESD) protection. This optimization involves combined experimental and Technology Computer Aided Design (TCAD) ESD simulation analysis of the quasi-static current-voltage and transient response characteristics during fast stress conditions. The underlying physical mechanisms critical to the device design are demonstrated based on very fast transmission line pulsing (VFTLP) measurement and physics-based simulation results. (C) 2013 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

54

Issue/Number

1

Publication Date

1-1-2014

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/j.microrel.2013.09.021

Language

English

First Page

57

Last Page

63

WOS Identifier

WOS:000331342800009

ISSN

0026-2714

Recommended Citation

"Design optimization of SiGe BiCMOS Silicon Controlled Rectifier for Charged Device Model (CDM) protection applications" (2014). Faculty Bibliography 2010s. 5214.
https://stars.library.ucf.edu/facultybib2010/5214