Design optimization of SiGe BiCMOS Silicon Controlled Rectifier for Charged Device Model (CDM) protection applications

    Authors

    Q. Cui; S. Parthasarathy; J. A. Salcedo; J. J. Liou; J. J. Hajjar;Y. Z. Zhou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    ESD PROTECTION; TECHNOLOGIES; SCRS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Silicon Controlled Rectifier (SCR) devices fabricated in a SiGe BiCMOS technology are optimized for Charged Device Model (CDM) Electrostatic Discharge (ESD) protection. This optimization involves combined experimental and Technology Computer Aided Design (TCAD) ESD simulation analysis of the quasi-static current-voltage and transient response characteristics during fast stress conditions. The underlying physical mechanisms critical to the device design are demonstrated based on very fast transmission line pulsing (VFTLP) measurement and physics-based simulation results. (C) 2013 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    54

    Issue/Number

    1

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    57

    Last Page

    63

    WOS Identifier

    WOS:000331342800009

    ISSN

    0026-2714

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