Evolution of Leakage Current Paths in MC-Si PV Modules From Leading Manufacturers Undergoing High-Voltage Bias Testing

    Authors

    N. G. Dhere; N. S. Shiradkar;E. Schneller

    Comments

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    Abbreviated Journal Title

    IEEE J. Photovolt.

    Keywords

    Degradation; high-voltage bias; leakage current; photovoltaic (PV); cells; photovoltaic systems; potential-induced degradation; reliability; system voltage stress; PHOTOVOLTAIC MODULES; Energy & Fuels; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    The evolution of leakage currents in photovoltaic modules undergoing outdoor high-voltage bias testing is studied using data from high-voltage bias testing of multicrystalline silicon modules from leading manufacturers. An analysis of the module leakage currents as a function of environmental conditions including temperature, relative humidity, rain, and wetness is carried out. The behavior of the modules was found to be dependent on the module construction and the materials used. The Arrhenius model was used to fit the experimental data and activation energies were computed for various relative humidity values. The effect of dew and rain (wetness) on the front glass was investigated. Changes in the leakage current during dry conditions were studied using the temperature dependence of resistivity of bulk soda-lime glass. Because of the approximately tenfold increase in leakage currents during the wet conditions, it is suggested that the accelerated tests should not be limited exclusively to noncondensing environments but should also be complemented with tests that include wet conditions.

    Journal Title

    Ieee Journal of Photovoltaics

    Volume

    4

    Issue/Number

    2

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    654

    Last Page

    658

    WOS Identifier

    WOS:000332008000019

    ISSN

    2156-3381

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