Decoherence and quantum interference assisted electron trapping in a quantum dot

    Authors

    A. El Halawany;M. N. Leuenberger

    Comments

    Authors: contact us about adding a copy of your work at [email protected]

    Abbreviated Journal Title

    Phys. Status Solidi B-Basic Solid State Phys.

    Keywords

    electronic states; electronic transport; nanostructures; quantum dots; semiconductors; RELAXATION; STATES; Physics, Condensed Matter

    Abstract

    We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 and 300 K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction. Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K and 58% at 300 K. Our model provides a novel method of trapping an electron at room temperature. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    Journal Title

    Physica Status Solidi B-Basic Solid State Physics

    Volume

    251

    Issue/Number

    8

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    1498

    Last Page

    1509

    WOS Identifier

    WOS:000340454200003

    ISSN

    0370-1972

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