A New Analytical Subthreshold Potential/Current Model for Quadruple-Gate Junctionless MOSFETs

    Authors

    L. F. He; T. K. Chiang; J. J. Liou; W. C. Zheng;Z. W. Liu

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Drift-diffusion approach; equivalent insulator thickness; junctionless; field-effect transistor (JFET); quadruple-gate; scaling length; subthreshold current; subthreshold potential; THRESHOLD VOLTAGE MODEL; NANOWIRE TRANSISTORS; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    In this paper, we built potential and current models for quadruple-gate junctionless filed-effect transistor (QGJLFET) in subthreshold regime. A new potential distribution function is provided for the cross section of QGJLFETs, based on which we derived a more accurate expression of natural length for QGJLFETs. The result shows that a quadruple-gate FET is far more than a simple composition of two double-gate FETs, but with some coupling components. To avoid complex computation of potential near the corner, we come up with a new concept of equivalent insulator thickness, transforming the influence of corner into the change of insulator thickness. With these renewed parameters and scaling equation, the potential distribution in channel is finally obtained. Based on this potential model, subthreshold current is derived using drift-diffusion approach and Pao-Sah integral.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    61

    Issue/Number

    6

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    1972

    Last Page

    1978

    WOS Identifier

    WOS:000338026200054

    ISSN

    0018-9383

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