A Reliable Si3N4/Al2O3-HfO2 Stack MIM Capacitor for High-Voltage Analog Applications

    Authors

    C. S. Ho; S. J. Chang; S. C. Chen; J. J. Liou;H. G. Li

    Comments

    Authors: contact us about adding a copy of your work at [email protected]

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Atomic layer deposition (ALD); capacitance density; high-k; laminated; Al2O3-HfO2 (LAHO) insulator; metal-insulator-metal (MIM) capacitor; time-dependent dielectric breakdown (TDDB); voltage linearity; DIELECTRICS; HFO2; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    In this paper, we propose for the first time an attractive Si3N4/laminated Al2O3-HfO2 (LAHO) stack metal-insulator-metal (MIM) capacitor with a low-leakage characteristic, good voltage linearity, high capacitance density, and excellent time-dependent dielectric breakdown (TDDB) reliability. The capacitor demonstrates a capacitance density of 4.2 fF/mu m(2), quadratic voltage coefficients (alpha) of 106 ppm/V-2, and 18.92-year TDDB lifetime under a stressing voltage of 6.6 V. For the extended performance, it is projected that such a capacitor can possess a maximum capacitance density of 4.13 fF/mu m(2) with alpha < = 100 ppm/V-2 and TDDB lifetime of 10 years under an analog operation of 7 V. Furthermore, this paper shows that a and TDDB lifetime of the new capacitor are very sensitive to the thickness of the Si3N4 film. Comparison of the new MIM capacitors with the SiO2/HfO2 stack MIM capacitors shows that the SiO2/HfO2 capacitor is more suitable for low-voltage applications, whereas the new Si3N4/LAHO capacitor is superior for operations requiring a higher biasing condition.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    61

    Issue/Number

    8

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    2944

    Last Page

    2949

    WOS Identifier

    WOS:000342906200048

    ISSN

    0018-9383

    Share

    COinS
     

    Accessibility Statement

    This item was created or digitized prior to April 24, 2027, or is a reproduction of legacy media created before that date. It is preserved in its original, unmodified state specifically for research, reference, or historical recordkeeping. In accordance with the ADA Title II Final Rule, the University Libraries provides accessible versions of archival materials upon request. To request an accommodation for this item, please submit an accessibility request form.