Photoluminescence Quenching in Single-Layer MoS2 via Oxygen Plasma Treatment

    Authors

    N. R. Kang; H. P. Paudel; M. N. Leuenberger; L. Tetard;S. I. Khondaker

    Comments

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    Abbreviated Journal Title

    J. Phys. Chem. C

    Keywords

    GENERALIZED GRADIENT APPROXIMATION; MONOLAYER MOS2; GRAPHENE OXIDE; RAMAN-SCATTERING; ELECTRONICS; TRANSISTORS; XPS; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, ; Multidisciplinary

    Abstract

    By creating defects via oxygen plasma treatment, we demonstrate optical properties variation of single-layer MoS2. We found that, with increasing plasma exposure time, the photoluminescence (PL) evolves from very high intensity to complete quenching, accompanied by gradual reduction and broadening of MoS2 Raman modes, indicative of distortion of the MoS2 lattice after oxygen bombardment. X-ray photoelectron spectroscopy study shows the appearance of the Mo6+ peak, suggesting the creation of MoO3 disordered regions in the MoS2 flake. Finally, using band structure calculations, we demonstrate that the creation of MoO3 disordered domains upon exposure to oxygen plasma leads to a direct-to-indirect bandgap transition in single-layer MoS2, which explains the observed PL quenching.

    Journal Title

    Journal of Physical Chemistry C

    Volume

    118

    Issue/Number

    36

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    21258

    Last Page

    21263

    WOS Identifier

    WOS:000341619500061

    ISSN

    1932-7447

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