A Novel Product-Level Human Metal Model Characterization Methodology

    Authors

    S. R. Luo; J. A. Salcedo; J. J. Hajjar; Y. Z. Zhou;J. J. Liou

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    Electrostatic discharges; human metal model; product level; characterization; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits' HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    14

    Issue/Number

    2

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    772

    Last Page

    774

    WOS Identifier

    WOS:000337132200026

    ISSN

    1530-4388

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