Title

A Novel Product-Level Human Metal Model Characterization Methodology

Authors

Authors

S. R. Luo; J. A. Salcedo; J. J. Hajjar; Y. Z. Zhou;J. J. Liou

Comments

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Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

Electrostatic discharges; human metal model; product level; characterization; Engineering, Electrical & Electronic; Physics, Applied

Abstract

A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits' HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

14

Issue/Number

2

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

772

Last Page

774

WOS Identifier

WOS:000337132200026

ISSN

1530-4388

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