Title
A Novel Product-Level Human Metal Model Characterization Methodology
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
Keywords
Electrostatic discharges; human metal model; product level; characterization; Engineering, Electrical & Electronic; Physics, Applied
Abstract
A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits' HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing.
Journal Title
Ieee Transactions on Device and Materials Reliability
Volume
14
Issue/Number
2
Publication Date
1-1-2014
Document Type
Article
Language
English
First Page
772
Last Page
774
WOS Identifier
ISSN
1530-4388
Recommended Citation
"A Novel Product-Level Human Metal Model Characterization Methodology" (2014). Faculty Bibliography 2010s. 5739.
https://stars.library.ucf.edu/facultybib2010/5739
Comments
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