Title

Postgrowth Tuning of the Bandgap of Single-Layer Molybdenum Disulfide Films by Sulfur/Selenium Exchange

Authors

Authors

Q. Ma; M. Isarraraz; C. S. Wang; E. Preciado; V. Klee; S. Bobek; K. Yamaguchi; E. Li; P. M. Odenthal; A. Nguyen; D. Barroso; D. Z. Sun; G. V. Palacio; M. Gomez; A. Nguyen; D. Le; G. Pawin; J. Mann; T. F. Heinz; T. S. Rahman;L. Bartels

Comments

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Abbreviated Journal Title

ACS Nano

Keywords

molybdenum disulfide; molybdenum diselenide; transition metal; dichalcogenides; CVD; sputtering; bandgap engineering; atomically thin; films; METAL DICHALCOGENIDE ALLOYS; MONOLAYER MOS2; VALLEY POLARIZATION; ATOMIC; LAYERS; PHOTOLUMINESCENCE; GRAPHENE; ELECTRONICS; NANOSHEETS; GROWTH; PHASE; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience &; Nanotechnology; Materials Science, Multidisciplinary

Abstract

We demonstrate bandgap tuning of a single-layer MoS2 film on SiO2/Si via substitution of its sulfur atoms by selenium through a process of gentle sputtering, exposure to a selenium precursor, and annealing. We characterize the substitution process both for S/S and S/Se replacement Photoluminescence and, in the latter case, X-ray photoelectron spectroscopy provide direct evidence of optical band gap shift and selenium incorporation, respectively. We discuss our experimental observations, including the limit of the achievable bandgap shift, in terms of the role of stress in the film as elucidated by computational studies, based on density functional theory. The resultant films are stable in vacuum, but deteriorate under optical excitation In air.

Journal Title

Acs Nano

Volume

8

Issue/Number

5

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

4672

Last Page

4677

WOS Identifier

WOS:000336640600056

ISSN

1936-0851

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