2-Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2(1-x)Se2x Monolayers

    Authors

    J. Mann; Q. Ma; P. M. Odenthal; M. Isarraraz; D. Le; E. Preciado; D. Barroso; K. Yamaguchi; G. V. Palacio; A. Nguyen; T. Tran; M. Wurch; A. Nguyen; V. Klee; S. Bobek; D. Z. Sun; T. F. Heinz; T. S. Rahman; R. Kawakami;L. Bartels

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Adv. Mater.

    Keywords

    molybdenum disulfide; molybdenum diselenide; transition metal; dichalcogenides; CVD; alloys; bandgap engineering; atomically thin films; MOS2 ATOMIC LAYERS; VALLEY POLARIZATION; LARGE-AREA; EXFOLIATED MOS2; GROWTH; SEMICONDUCTOR; GRAPHENE; FILMS; PHOTOLUMINESCENCE; ALLOYS; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience &; Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter

    Journal Title

    Advanced Materials

    Volume

    26

    Issue/Number

    9

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    1399

    Last Page

    1404

    WOS Identifier

    WOS:000332330400002

    ISSN

    0935-9648

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