About Ge(Mn) diluted magnetic semiconductor

    Authors

    A. Portavoce; S. Bertaina; O. Abbes; L. Chow;V. Le Thanh

    Comments

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    Abbreviated Journal Title

    Mater. Lett.

    Keywords

    Germanium; Magnesium; Diluted magnetic semiconductor; Spintronics; RESONANCE; Materials Science, Multidisciplinary; Physics, Applied

    Abstract

    Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic properties of this solution. These measurements, combined with secondary ion mass spectrometry, atomic force microscopy, and Auger electron spectroscopy, show that the detected ferromagnetic signal is due to surface islands, while Mn atoms on Ge substitutional sites gives no detectable ESR signal. (C) 2014 Elsevier B.V. All rights reserved.

    Journal Title

    Materials Letters

    Volume

    119

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    68

    Last Page

    70

    WOS Identifier

    WOS:000332811500019

    ISSN

    0167-577X

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