Long jumps contribution to the adatom diffusion process near the step edge: The case of Ag/Cu(110)

    Authors

    K. Sbiaai; Y. Boughaleb; A. Kara; S. Touhtouh;B. Sahraoui

    Comments

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    Abbreviated Journal Title

    Phys. Status Solidi B-Basic Solid State Phys.

    Keywords

    adatom; embedded-atom method; molecular dynamic simulation; silver; surface diffusion; SURFACE SELF-DIFFUSION; HOMOEPITAXIAL GROWTH; CU SURFACES; CU(100); ATOMS; AG; NANOPARTICLES; SIMULATION; DYNAMICS; CLUSTERS; Physics, Condensed Matter

    Abstract

    In this work, the diffusion of a single Ag adatom on a low-index Cu surface (110) in the presence of a step edge is studied using the embedded-atom method (EAM). Molecular static simulation is carried out in order to calculate the activation energy of different diffusion processes. Our findings are in a good agreement with results existing in the literature indicating that adatom diffusion via jump process is more favored than the other mechanisms. The activation energy corresponding to diffusing via hopping is found to be 0.25eV (at 0K). On the other hand, the activation barrier calculated by molecular dynamics (MD) simulation for a large range of temperature (310-500K) is found to be around 0.25eV for both upper and lower position leading to a good agreement between static and dynamic calculations. The prefactor for Ag adatom self-diffusion via hopping on Cu(110) surface near the step edge is examined. The results show that the prefactors are 2.7 and 3.6x10(4)cm(2)s(-1) for the upper and lower position, respectively. This is in line with the value of 10(-3)cm(2)s(-1) that is generally adopted. We also found that long jumps occur frequently in this system and their contribution cannot be neglected.

    Journal Title

    Physica Status Solidi B-Basic Solid State Physics

    Volume

    251

    Issue/Number

    4

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    838

    Last Page

    844

    WOS Identifier

    WOS:000334841500016

    ISSN

    0370-1972

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