Title

Integration-based approach to evaluate the sub-threshold slope of MOSFETs

Authors

Authors

A. Ortiz-Conde; F. J. Garcia-Sanchez; J. J. Liou;C. S. Ho

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

THRESHOLD VOLTAGE; MODEL PARAMETERS; EXTRACTION; TFT; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

We propose the use of simple integration-based methods to extract the sub-threshold current slope factor of MOSFETs as an alternative to traditional extraction processes based on differentiating the subthreshold transfer characteristics. The purpose is to lessen the effects of error and noise often present in the measurement of very small currents, which are aggravated by the differentiation processes. The effectiveness of the proposed methods is compared to the traditional Transconductance-to-Current Ratio method using the measured transfer characteristics of two experimental devices as application examples. (C) 2009 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

50

Issue/Number

2

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

312

Last Page

315

WOS Identifier

WOS:000274873700023

ISSN

0026-2714

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