Title
Integration-based approach to evaluate the sub-threshold slope of MOSFETs
Abbreviated Journal Title
Microelectron. Reliab.
Keywords
THRESHOLD VOLTAGE; MODEL PARAMETERS; EXTRACTION; TFT; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
We propose the use of simple integration-based methods to extract the sub-threshold current slope factor of MOSFETs as an alternative to traditional extraction processes based on differentiating the subthreshold transfer characteristics. The purpose is to lessen the effects of error and noise often present in the measurement of very small currents, which are aggravated by the differentiation processes. The effectiveness of the proposed methods is compared to the traditional Transconductance-to-Current Ratio method using the measured transfer characteristics of two experimental devices as application examples. (C) 2009 Elsevier Ltd. All rights reserved.
Journal Title
Microelectronics Reliability
Volume
50
Issue/Number
2
Publication Date
1-1-2010
Document Type
Article
Language
English
First Page
312
Last Page
315
WOS Identifier
ISSN
0026-2714
Recommended Citation
"Integration-based approach to evaluate the sub-threshold slope of MOSFETs" (2010). Faculty Bibliography 2010s. 616.
https://stars.library.ucf.edu/facultybib2010/616
Comments
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