Integration-based approach to evaluate the sub-threshold slope of MOSFETs

    Authors

    A. Ortiz-Conde; F. J. Garcia-Sanchez; J. J. Liou;C. S. Ho

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    THRESHOLD VOLTAGE; MODEL PARAMETERS; EXTRACTION; TFT; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    We propose the use of simple integration-based methods to extract the sub-threshold current slope factor of MOSFETs as an alternative to traditional extraction processes based on differentiating the subthreshold transfer characteristics. The purpose is to lessen the effects of error and noise often present in the measurement of very small currents, which are aggravated by the differentiation processes. The effectiveness of the proposed methods is compared to the traditional Transconductance-to-Current Ratio method using the measured transfer characteristics of two experimental devices as application examples. (C) 2009 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    50

    Issue/Number

    2

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    312

    Last Page

    315

    WOS Identifier

    WOS:000274873700023

    ISSN

    0026-2714

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