Title

Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure

Authors

Authors

A. Ortiz-Conde; A. D. L. Rey; W. Liu; W. C. Chen; H. C. Lin; J. J. Liou; J. Muci;F. J. Garcia-Sanchez

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Solid-State Electron.

Keywords

Parameter extraction; Threshold voltage; Subthreshold Slope; Double; integration; Successive integration; Polysilicon; Nanowire; MOSFETs; Noise reduction; THIN-FILM TRANSISTORS; SURROUNDING-GATE MOSFETS; FIELD-EFFECT; TRANSISTOR; THRESHOLD-VOLTAGE; SUBTHRESHOLD BEHAVIOR; SOI MOSFETS; CHANNEL; MODEL; FABRICATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold Slope factor are extracted from noisy measured current-voltage characteristics. It is shown that the present method offers advantages over previous extraction procedures regarding data noise reduction. In addition, the normalized mutual integral difference operator method is scrutinized and an improvement of the method is presented. (C) 2010 Elsevier Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

54

Issue/Number

6

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

635

Last Page

641

WOS Identifier

WOS:000277500300005

ISSN

0038-1101

Share

COinS