Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure

    Authors

    A. Ortiz-Conde; A. D. L. Rey; W. Liu; W. C. Chen; H. C. Lin; J. J. Liou; J. Muci;F. J. Garcia-Sanchez

    Comments

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    Abbreviated Journal Title

    Solid-State Electron.

    Keywords

    Parameter extraction; Threshold voltage; Subthreshold Slope; Double; integration; Successive integration; Polysilicon; Nanowire; MOSFETs; Noise reduction; THIN-FILM TRANSISTORS; SURROUNDING-GATE MOSFETS; FIELD-EFFECT; TRANSISTOR; THRESHOLD-VOLTAGE; SUBTHRESHOLD BEHAVIOR; SOI MOSFETS; CHANNEL; MODEL; FABRICATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold Slope factor are extracted from noisy measured current-voltage characteristics. It is shown that the present method offers advantages over previous extraction procedures regarding data noise reduction. In addition, the normalized mutual integral difference operator method is scrutinized and an improvement of the method is presented. (C) 2010 Elsevier Ltd. All rights reserved.

    Journal Title

    Solid-State Electronics

    Volume

    54

    Issue/Number

    6

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    635

    Last Page

    641

    WOS Identifier

    WOS:000277500300005

    ISSN

    0038-1101

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